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Frequency Selective Surfaces Enable Mems Gas Sensor

Published online by Cambridge University Press:  01 February 2011

Irina Puscasu ,
Martin U. Pralle ,
Mark P. McNeal ,
Nicholas Moelders ,
Lisa Last ,
William Ho ,
Anton C. Greenwald ,
James T. Daly ,
Edward A. Johnson  and
Ihab El-Kady
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Irina Puscasu
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Martin U. Pralle
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Mark P. McNeal
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Nicholas Moelders
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Lisa Last
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
William Ho
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Anton C. Greenwald
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
James T. Daly
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Edward A. Johnson
Affiliation:
Ion Optics, Inc., 411 Waverley Oaks Road, Waltham, MA 02452
Ihab El-Kady
Affiliation:
Ames Laboratory and Department of Physics, Iowa State University, Ames, IA 50011
Rana Biswas
Affiliation:
Ames Laboratory and Department of Physics, Iowa State University, Ames, IA 50011
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Abstract

We have developed a thermally stimulated narrow-band infrared source for sensing, spectroscopy and thermophotovoltaic applications by combining the unique advantages of two different structures: a photonic crystal that consists of an array of holes etched into a dielectric substrate and a periodically perforated metallic thin film. The dielectric photonic crystal structure is passive and exhibits a strong absorption at resonance. This acts as a radiation reservoir for the conductive array, which plays an active role through plasmon interactions and is opaque at all wavelengths except those at which coupling occurs. We have fabricated the arrays on silicon, silicon dioxide and silicon nitride substrates using MEMS-based processing methods. Infrared spectroscopic studies were used to characterize reflection, absorption and emission in the 2 to 14 micron range showing narrow band resonance. Spectral tuning was accomplished by controlling symmetry and lattice spacing of the arrays. The effects of the etch depth, metal and dielectric properties have been studied experimentally and theoretically. These structures have been used as an emitter/detector sensor chip to selectively detect industrial pollutants like carbon dioxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , L3.4
Copyright
Copyright © Materials Research Society 2002

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References

1. Madou, M., Fundamentals of Microfabrication, CRC Press, Boca Raton, Fl, 1997 Google Scholar
2. Njafi, N., Wise, K.D., Schwank, J.W., A micromachined ultra-thin-film gas detector, IEEE Trans. Electron Devices 41 (1994) 1770–1777 Google Scholar
3. Lin, S.Y., Fleming, J.G., Chow, E., Bur, J., Choi, K.K., and Goldberg, A., “Enhancement and Suppression of Thermal Emission by a Three-Dimensional Photonic Crystal”, Phys. Rev. B, 62 (4), pp. 2243–2246, 2000 Google Scholar
4. Puscasu, I., Schaich, W.L., and Boreman, G.D., “Modeling Parameters for the Spectral Behavior of Infrared Frequency-Selective Surfaces,” App. Opt., 40 (1), pp. 118–124, 2001.Google Scholar
5. Johnson, E.A., Patent No. 5838016Google Scholar
6. Wolfe, W. L., “Introduction to Radiometry” (vol. TT29, SPIE Press, 1998).Google Scholar
7. Timans, P.J., “The role of thermal radiative properties of semiconductor wafers in rapid thermal processing”, Mat. Res. Soc. Symp. Proc. 429, 3, 1996 Google Scholar