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Frequency Dependence of the Coercive Voltage of Ferroelectric Thin Films

Published online by Cambridge University Press:  10 February 2011

R. Waser ,
O. Lohse ,
M. Grossmann ,
U. Boettger ,
D. Bolten  and
S. Tiedke
R. Waser
Affiliation:
Research Center Juelich, D-52425 Juelich, Germany
O. Lohse
Affiliation:
Institut fuer Werkstoffe der Elektrotechnik, RWTH University of Technology Aachen, D-52056 Aachen, Germany
M. Grossmann
Affiliation:
Institut fuer Werkstoffe der Elektrotechnik, RWTH University of Technology Aachen, D-52056 Aachen, Germany
U. Boettger
Affiliation:
Institut fuer Werkstoffe der Elektrotechnik, RWTH University of Technology Aachen, D-52056 Aachen, Germany
D. Bolten
Affiliation:
Institut fuer Werkstoffe der Elektrotechnik, RWTH University of Technology Aachen, D-52056 Aachen, Germany
S. Tiedke
Affiliation:
aixACCT Tech., D-52056 Aachen, Germany
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Abstract

Recent progress in the measuring techniques based on a combination of a quasistatic P-V analysis, conventional dynamic hysteresis measurements, and fast pulse characterization allows to determine the coercive voltage as a function of the frequency over a range of more than seven orders of magnitude. In this review, we explain the experimental techniques and present the results for the thin film systems of SrBi2Ta2O9 (SBT) and Pb(ZrTi)O3 (PZT). Theoretical models of the correlation between the ferroelectric relaxation and the coercive voltage are discussed in the light of the new data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 291
Copyright
Copyright © Materials Research Society 2000

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