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Formation Process of Si Nanoparticles Formed by Laser Ablation Method

Published online by Cambridge University Press:  09 August 2011

T. Makimura ,
T. Mizuta ,
T. Ueda  and
K. Murakami
T. Makimura
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan, makimura@ims.tsukuba.ac.jp
T. Mizuta
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan, makimura@ims.tsukuba.ac.jp
T. Ueda
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan, makimura@ims.tsukuba.ac.jp
K. Murakami
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan, makimura@ims.tsukuba.ac.jp
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Abstract

Utilizing laser ablation of Si targets, nanoparticles can be cleanly formed in rare gas. In order to fabricate nanoparticles with well-defined structures such as those whose surfaces are chemically modified, it is important to investigate the formation process of the nanoparticles. We have developed a decomposition method for measuring time-resolved spatial distributions of nanoparticles in rare gas. Applying this method, we have investigated formation processes of silicon nanoparticles in 2-Torr argon gas. The nanoparticles are found to grow from 300 Ais to 1 ms after the ablation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 51
Copyright
Copyright © Materials Research Society 1999

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