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Formation of Sic Films on Silicon Field Emitters

Published online by Cambridge University Press:  21 February 2011

Jiang Liu
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
U. T. Son
Affiliation:
Agency For Defense Development, R.O., Korea
A. N. Stepanova
Affiliation:
Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia
K. N. Christensen
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
G. W. Wojak
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
E. I. Givargizov
Affiliation:
Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia
K. J. Bachmann
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
John J. Hren
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC
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Abstract

Thin films of silicon carbide have been formed on silicon field emitters by chemical reaction with ethylene (C2H4) at temperatures of 850 to 950°C using ethylene gas pressures up to 5×10-3 Torr. By controlling the reaction time and temperature, we have made SiC coatings of from ∼20 A thickness to complete transformation of tips to SiC (1-2 μm). The electron diffraction pattern of the SiC layers show the expected 20% lattice mismatch with silicon and, for those emitters completely transformed, a polycrystalline 3C-SiC polytype was identified. The small radius of curvature was maintained for both the coated and completely transformed tips, although some defects and surface roughness was introduced during the treatments.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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