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The Formation of Radiative Defects at GaAs/GaInP Interface

Published online by Cambridge University Press:  10 February 2011

Kazuo Uchida ,
Takayuki Arai  and
Koh Matsumoto
Kazuo Uchida
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukuba, Ibaraki, 300-33, Japan
Takayuki Arai
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukuba, Ibaraki, 300-33, Japan
Koh Matsumoto
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukuba, Ibaraki, 300-33, Japan
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Abstract

We report the optical characteristics of 100 A˚ thick GaAs/Ga0.521n0.48P single quantum wells grown by Metal Organic Vapor Phase Epitaxy. We have confirmed from the 77 K photoluminescence (PL) that an optimum growth sequence is necessary to achieve the emission from the well (1.52 eV), otherwise only the deep emission band (1.46 eV) is observed. From the time-resolved photoluminescence and temperature dependent PL measurements, we assign that this 1.46 eV deep emission is a recombination of electron-hole pair in a vacancy-related defect which is spatially distributed at the imperfect GaAs/Ga 0.521n0.48P interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 319
Copyright
Copyright © Materials Research Society 1996

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