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Formation of Ohmic Carrier Injection at Anode/organic Interfaces and Carrier Transport Mechanisms of Organic Thin Films

Published online by Cambridge University Press:  31 January 2011

Toshinori Matsushima
Affiliation:
tmatusim@jaist.ac.jp, Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
Guang-He Jin
Affiliation:
kimgh@jaist.ac.jp, Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
Yoshihiro Kanai
Affiliation:
s0730021@jaist.ac.jp, Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
Tomoyuki Yokota
Affiliation:
t-yokota@jaist.ac.jp, Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
Seiki Kitada
Affiliation:
seili.kitada@jaist.ac.jp, Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
Toshiyuki Kishi
Affiliation:
s0730027@jaist.ac.jp, Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
Hideyuki Murata
Affiliation:
murata-h@jaist.ac.jp, Japan Advanced Institute of Science and Technology, School of Materials Science, Nomi, Ishikawa, Japan
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Abstract

We have shown that hole mobilities of a wide variety of organic thin films can be estimated using a steady-state space-charge-limited current (SCLC) technique due to formation of Ohmic hole injection by introducing a very thin hole-injection layer of molybdenum oxide (MoO3) between an indium tin oxide anode layer and an organic hole-transport layer. Organic hole-transport materials used to estimate hole mobilities are 4,4′,4″-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA), 4,4′,4″-tris(N-2-naphthyl-N-phenyl-amino)triphenylamine (2-TNATA), rubrene, N,N′-di(m-tolyl)-N,N′-diphenylbenzidine (TPD), and N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine (α-NPD). These materials are found to have electric-field-dependent hole mobilities. While field dependence parameters (β) estimated from SCLCs are almost similar to those estimated using a widely used time-of-flight (TOF) technique, zero field SCLC mobilities (μ0) are about one order of magnitude lower than zero field TOF mobilities.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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