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Formation of Metallic Nanoclusters in SiC by MeV Ion Implantation

Published online by Cambridge University Press:  10 February 2011

D. Ila ,
E. K. Williams ,
A. Elsamadicy ,
B. Gasic ,
D. B. Poker ,
D. K. Hensley ,
M. A. George ,
M. A. Ayoub  and
David J. Larkin
D. Ila
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762, USA
E. K. Williams
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762, USA
A. Elsamadicy
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762, USA
B. Gasic
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL 35762, USA
D. B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
D. K. Hensley
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
M. A. George
Affiliation:
Dept. of Chemistry, University of Alabama in Huntsville, Huntsville, AL 35802, USA
M. A. Ayoub
Affiliation:
Dept. of Chemistry, University of Alabama in Huntsville, Huntsville, AL 35802, USA
David J. Larkin
Affiliation:
NASA Lewis Research Center, Cleveland, OH, 44135, USA
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Abstract

We present the results of our investigation of producing nanoclusters of gold, silver, copper and tin in 6H-SiC. This is accomplished by implanting 1.0 MeV Au, 2.0 MeV Ag, 2.0 MeV Cu, and 160 keV Sn into the Si face of SiC at room or elevated temperature followed by annealing at various temperatures. Using optical absorption spectrophotometry, we determined the location of the absorption band for each metal nanocluster in SiC. Elevated temperature implantation reduces optical absorption due to ion implantation induced defects. Using the Mie theory, we determined the index of refraction in the implanted volume.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 223
Copyright
Copyright © Materials Research Society 2000

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References

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