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Formation Of Er-Related Donor Centers During Postimplantation Annealing Of Si:Er

Published online by Cambridge University Press:  15 February 2011

N.A. Sobolev
Affiliation:
Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia, nick@sobolev.ioffe.rssi.ru
O.V. Aleksandrov
Affiliation:
Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia, nick@sobolev.ioffe.rssi.ru
E.I. Shek
Affiliation:
Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia, nick@sobolev.ioffe.rssi.ru
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Abstract

Dependence of the donor center concentration, the Er activation coefficient and the nlayer thickness on the implantation and subsequent annealing conditions was studied. A model of formation of donor centers has been developed. The model is based on the interaction of Er atoms with self-interstitials. It describes the dependence of electrical parameters of Er-doped layers on temperature and time of postimplantation annealing.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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