Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-26T15:08:34.117Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of Amorphous Interlayers by Solid-State Diffusion in Refractory Metal/Silicon Systems

Published online by Cambridge University Press:  21 February 2011

J.Y. Cheng ,
M.H. Wang  and
L.J. Chen
J.Y. Cheng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
M.H. Wang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Get access

Abstract

Formation and growth of amorphous interlayers (a-interlayers) in nine refractroy metal and silicon systems by solid-state diffusion have been investigated by conventional and high resolution transmission electron microscopy. The amorphous interlayers were found to form in samples annealed at 350–650 °C. The growth was found to follow a linear growth law initially then slow down until a critical thicknees was reached. The interface structures were examined. The correlations among difference in atomic size between metal and Si atoms, growth rate and activation energy of the linear growth, critical and maximum a-interlayer thickness, the largest heat of formation energy for crystalline silicides, the calculated free energy difference in forming amorphous phase as well as atomic mobility in refractroy metal/silicon systems are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 77
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Johnson, W.L., Progr. Mat. Sci. 30, 81 (1988).Google Scholar
2. Tu, K.N. and Chou, T.C., Phys. Rev. Lett. 61, 1863 (1988).Google Scholar
3. Abelson, J.R., Kim, K.B., Mercer, D.E., Helms, C.R., Sinclair, R., and Sigmon, T.W., J. Appl. Phys. 63, 689 (1988).Google Scholar
4. Chen, L.J., Wu, I.W., Chu, J.J., and Nieh, C.W., J. Appl. Phys. 63, 2778 (1988).Google Scholar
5. Morgan, A.E., Broadbent, E.K., Ritz, K.N., Sadana, D.K., and Burrow, B.J., J. Appl. Phys. 64, 344 (1988).Google Scholar
6. Lur, W. and Chen, L.J., Appl. Phys. Lett. 54, 1219 (1989).Google Scholar
7. Cheng, J.Y. and Chen, L.J., Appl. Phys. Lett. 56, 457 (1990).Google Scholar
8. Tu, K.N. and Mayer, J.W., in Thin Films-Interdiffusion and Reactions, edited by Poate, J.M., Tu, K.N., and Mayer, J.W. (Wiley,.New York, 1978) p. 359.Google Scholar
9. Nicolet, M.A. and Lau, S.S., in Materials and Process Characterization, edited by Einspruch, N.G. and Larrabee, G.R. (Academic, New York, 1983), p. 329.Google Scholar
10. Bene, R.W., J. Appl. Phys. 61, 1826 (1987).Google Scholar
11. Walser, R.M. and Bene, R.W., Appl. Phys. Lett. 28, 624 (1976)Google Scholar
12. Cheng, J.Y. and Chen, L.J., unpublished work.Google Scholar
13. Wang, M.H. and Chen, L.J., unpublished work.Google Scholar
14. Raaijmakers, I.J.M.M., Reader, A.H., and Oosting, P.H., J. Appl. Phys. 62, 2790 (1988).Google Scholar
15. Miedema, A.R., Buschow, K.H.J. and Mal, H.H. van, J. Less-Common Metals, 49, 463 (1976).Google Scholar
16. Chen, L.J., Cheng, H.C., and Lin, W.T., Mater. Res. Soc. Symp. Proc. 54, 245 (1986).Google Scholar