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Fim/Iap/Tem Studies of Ion Implanted Nickel Emitters

Published online by Cambridge University Press:  25 February 2011

S. D. Walck  and
J. J. Hren
S. D. Walck
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
J. J. Hren
Affiliation:
Department of Materials Science and Engineering University of Florida, Gainesville, FL 32611
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Abstract

Accurate depth profiling of implanted hydrogen and its isotopes in metals is extremely important. Field ion microscopy and atom-probe techniques provide the most accurate depth profiling analytical method of any available. In addition, they are extremely sensitive to hydrogen. This paper reports our early work on hydrogen trapping at defects in metals using the Field Ion Microscope/Imaging Atom Probe (FIM/IAP). Our results deal primarily with the control experiments required to overcome instrumental difficulties associated with in situ implantation and the influence of a high electric field. Transmission Electron Microscopy (TEM) has been used extensively to independently examine the influence of high electric fields on emitters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 41: Symposium K – Advanced Photon and Particle Techniques for the Characterization of Defects in Solids , 1984 , 325
Copyright
Copyright © Materials Research Society 1985

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