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Film Properties of High-Performance FSG Films

Published online by Cambridge University Press:  15 March 2011

T. Yoda ,
H. Miyajima ,
K. Fujita ,
R. Nakata  and
Y. Nishiyama
T. Yoda
Affiliation:
Advanced ULSI Process Engineering Department Toshiba Corporation, Semiconductor Company, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
H. Miyajima
Affiliation:
Toshiba Corporation, Semiconductor Company, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
K. Fujita
Affiliation:
Toshiba Corporation, Semiconductor Company, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
R. Nakata
Affiliation:
Toshiba Corporation, Semiconductor Company, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Y. Nishiyama
Affiliation:
Toshiba Corporation, Semiconductor Company, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Abstract

An advanced FSG film of k=3.4 was developed, which exhibited excellent resistance for moisture absorption. Physical and chemical properties of this advanced FSG film were compared by typical FSG films deposited in both high density plasma (HDP) and PE-CVD reactors, for the same k value.

The advanced FSG film appears to be superior to the HDP-FSG film by a wide margin in the following tests. The moisture absorption rate by TDS (after 4 days of air exposure) is about 5 times lower, the hardness was 1.8 times more, and the hygroscopicity (after 1 hr. boiling) was 2.6 times lower.

We conclude that these differences are mainly due to the unique film structure of the advanced FSG film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A10.5
Copyright
Copyright © Materials Research Society 2002

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