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Filling Dependence of Magnetoresistance in Perovskite-type Manganese Oxide Films

Published online by Cambridge University Press:  15 February 2011

Masahiro Kasail ,
Hideki Kuwaharal ,
Yutaka Moritomol ,
Yasuhide Tomioka  and
Yoshinori Tokura
Masahiro Kasail
Affiliation:
Joint Research Center for Atom Technology(JRCAT), Tsukuba 305, Japan
Hideki Kuwaharal
Affiliation:
Joint Research Center for Atom Technology(JRCAT), Tsukuba 305, Japan
Yutaka Moritomol
Affiliation:
Joint Research Center for Atom Technology(JRCAT), Tsukuba 305, Japan
Yasuhide Tomioka
Affiliation:
Joint Research Center for Atom Technology(JRCAT), Tsukuba 305, Japan
Yoshinori Tokura
Affiliation:
Joint Research Center for Atom Technology(JRCAT), Tsukuba 305, Japan Department of Applied Physics, University of Tokyo, Tokyo 113, Japan
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Abstract

Filling dependence of magnetotransport properties was investigated in Ndl−xSrxMnO3 films. Hysteretic behavior was observed in temperature dependencies of resistivity for restricted filling of x-0.35 and 0.50, indicating the occurrence of a first-order phase transition at low temperatures. The transition gives rise to a high-resistivity state which collapses to low-resistivity state under an external magnetic field. Change in resistivity by applying magnetic field was more than a order of magnitude. Origin of colossal magnetoresistance (CMR) is briefly discussed in terms of such a first-order phase change induced by a magnetic field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 537
Copyright
Copyright © Materials Research Society 1996

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