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Ferroelectric Properties and Crystalline Structures of BaMgF4 Thin Films Grown on Pt(111)/SiO2/Si(100)
Published online by Cambridge University Press: 10 February 2011
Abstract
Crystalline quality and ferroelectric properties of (120)-oriented BaMgF^BMF) films grown on Pt(111)/SiO2/Si(100) and n-Si(111) substrates have been investigated. The BaMgF4 films grown on Pt(111) have large and flat grains, while the films on Si(111) have small grains. The C-V curve of BaMgF4/Pt(111)/SiO2/Si(100) diodes showed a hysteresis loop with a memory window of 3.8V.
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- Copyright © Materials Research Society 1997