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Ferroelectric memory in La substituted Bi4Ti3O12 thin films

Published online by Cambridge University Press:  01 February 2011

R. E. Melgarejo  and
M. S. Tomar
R. E. Melgarejo
Affiliation:
Physics Department, University of Puerto Rico, Mayagüez, PR 00681–9016
M. S. Tomar
Affiliation:
Physics Department, University of Puerto Rico, Mayagüez, PR 00681–9016
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Abstract

The recent demonstration of large ferroelectric memory in rare earth substituted Bi4Ti3O12 attracted a lot of research interest in this material. Bi4-xLaxTi3O12 was synthesized by sol-gel route for different compositions: x = 0.00, 0.46, 0.56, 0.75, 0.95 and thin films were deposited by spin coating on Pt (Pt/TiO2/SiO2/Si) substrate. The post annealed films at 700°C were studied for their structural studies using x-ray diffraction and Raman spectroscopy. The prominent effect of La substitution is observed in low frequency Raman modes. X-ray diffraction and Raman studies show that the film growth was c-axis suppressed. Using improved contacts to Pt substrate, ferroelectric polarization Pr = 51 μC/cm2 has been achieved for 0.63 μm thick film of composition: x = 0.56 (BLT56) without appreciable fatigue.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C11.11
Copyright
Copyright © Materials Research Society 2004

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References

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