Failure in Tungsten-Filled Via Structures

J. J. Clement; J. R. Lloyd; C. V. Thompson

doi:10.1557/PROC-391-423

Abstract

Failure of the tungsten-filled via interconnect structure is modelled. Two mechanisms contributing to void growth are considered: relief of stress due to differential thermal expansion, and electromigration. A self-limiting void volume is predicted, resulting in a self-limiting resistance increase which is a function of structure geometry and the void morphology. The relative contributions of the two mechanisms change significantly as the temperature and current density are reduced from accelerated test conditions, affecting the extrapolation of test results to service conditions. Modified procedures for extrapolating lifetimes are discussed, as well as suggested process changes to improve reliability.

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Failure in Tungsten-Filled Via Structures

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This article has been cited by the following publications. This list is generated based on data provided by Crossref.

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