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Fabrication/Characterization of a Pseudomorphic Ga0.1In0.9P/InP MESFET

Published online by Cambridge University Press:  22 February 2011

M. S. Feng ,
Y. M. Hsin  and
C. H. Wu
M. S. Feng
Affiliation:
Institute of Materials Science & Enguneering, Hsinchu, Taiwan, R. O., China
Y. M. Hsin
Affiliation:
Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R. O., China
C. H. Wu
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R. O., China
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Abstract

A pseudomorphic Ga0.1In0.9P/InP MESFET grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) has been fabricated and characterized. The results indicated a transconductance of 66.7 ms/mm and a saturation drain current (Idss) of 55.6 mA have been achieved; furthermore, the Schottky barrier on InGaP as high as 0.67eV can be obtained using Pt2Si as the gate material. For comparison, a conventional InP MESFET with 5μm gate length has also been fabricated on InP epitaxial layer grown by low pressure metalorganic chemical vapor deposition on Fe-doped semi-insulating InP substrate. The transconductance and Idss were found to be 46.7 mS/mm and 43.1 mA at zero gate, respectively, for the depletion mode n-channel MESFET with Au as the gate metal; whereas, for the MESFET using Pt2Si as the gate metal, a transconductance of 40.3 mS/mm and a saturation drain current of 41.1 mA at zero gate bias have been obtained. The results indicated that Ga0.1In0.9P/lnP MESFET has better performance than InP MESFET because of higher energy gap of Ga0.1In0.9P.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 61
Copyright
Copyright © Materials Research Society 1993

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References

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