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Fabrication of Ultra-Shallow P+-N and N+-P Junctions by Diffusion From Selectively Deposited, Ion-Implanted and In-Situ Doped Si0.7Ge0.3

Published online by Cambridge University Press:  21 February 2011

D.T. Grider ,
M.C. ÖztÜrk ,
J.J. Wortman ,
G.S. Harris  and
D.M. Maher
D.T. Grider
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
M.C. ÖztÜrk
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
J.J. Wortman
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
G.S. Harris
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7916, Engineering, Raleigh, NC 27695-7916
D.M. Maher
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7916, Engineering, Raleigh, NC 27695-7916
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Abstract

Selectively deposited Si0.7Ge0.3 has been investigated as a potential diffusion source for fabricating ultra-shallow junctions in Si. Rapid thermal chemical vapor deposition (RTCVD) was used to selectively deposit Si0.7Ge0.3 on Si using SiH2C12, GeH4, and H2. Both ionimplanted and in-situ doped Si0.7Ge0.3 were considered as a diffusion source for fabricating ultra-shallow junctions. In-situ doping was achieved with B2H6 and PH3 for p-type and n-type doping, respectively. Boron and phosphorus diffusion in ion-implanted Si0.7Ge0.3 was investigated and modeled using SSUPREM4. Diffusion from implanted and in-situ doped Si0.7Ge0.3 in Si was also studied and modeled. Boron diffusivities in Si0.7Ge0.3 were found to be approximately 10 times greater than in Si, while phosphorus diffusivities were over 100 times greater in Si0.7Ge0.3. The faster dopant diffusivities in Si0.7Ge0.3 allow high surface concentration, abrupt diffusion profiles to be formed in Si. Gated, p-n junction diodes with junction depths as shallow as 140Å were fabricated and tested to study the quality of the diffusions from Si0.7Ge0.3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 31
Copyright
Copyright © Materials Research Society 1993

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