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Fabrication of Surface Nitridation Mask on GaAs Substrate for Nano-Lithography

Published online by Cambridge University Press:  01 February 2011

Yo Yamamoto ,
Kohji Saito ,
Toshiyuki Kondo ,
Takahiro Maruyama  and
Shigeya Naritsuka
Yo Yamamoto
Affiliation:
Meijo Univ.21st Century COE Program, Nagoya, Japan
Kohji Saito
Affiliation:
Dept. of Materials Science & Engineering, Meijo University, Nagoya, Japan.
Toshiyuki Kondo
Affiliation:
Dept. of Materials Science & Engineering, Meijo University, Nagoya, Japan.
Takahiro Maruyama
Affiliation:
Meijo Univ.21st Century COE Program, Nagoya, Japan Dept. of Materials Science & Engineering, Meijo University, Nagoya, Japan.
Shigeya Naritsuka
Affiliation:
Meijo Univ.21st Century COE Program, Nagoya, Japan Dept. of Materials Science & Engineering, Meijo University, Nagoya, Japan.
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Abstract

The surface nitridation of GaAs substrate under various conditions were performed and its surface morphology was studied by using atomic force microscope. The RMS roughness of the surfaces was closely related to formation of the particles which was formed by As evaporation and subsequent Ga migration, which was enhanced by higher substrate temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 843: Symposium T – Surface Engineering-Fundamentals and Applications , 2004 , T3.5
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

[1] Nishinaga, T., Nakano, T. and Zhang, S., Jpn. J. Appl. Phys. 27 (1988) L694.Google Scholar
[2] Zhang, S. and Nishinaga, T., J. Cryst. Growth. 99 (1990) 292.Google Scholar
[3] Suzuki, Y. and Nishinaga, T., Jpn. J. Appl. Phys. 28 (1989) 440.Google Scholar
[4] Bargman, R., Bauser, E. and Werner, J. H., Appl. Phys. Lett. 57 (1990) 351.Google Scholar
[5] Bargman, R., J. Cryst. Growth 110 (1991) 823.Google Scholar
[6] Zhang, S. and Nishinaga, T., Jpn. J. Appl. Phys. 29 (1990) 545.Google Scholar