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The Fabrication of Self-Aligned Ohmic Cobalt Contacts to Relaxed, N-Type Si0.7Ge0.3

Published online by Cambridge University Press:  03 September 2012

G. Patrick Watson ,
Don Monroe ,
J-Y Cheng ,
Eugene A. Fitzgerald ,
Ya-Hong Xie  and
R. Bruce Vandover
R. Bruce Vandover
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

Co(SiGe)x contacts have been formed on low defect density, relaxed Si0.7Ge0.3 layers by conventional self-aligned contact processing techniques. Test structures measuring the contact metal sheet resistance indicate that the resistivity is high for anneal temperatures from 450°C to 750°C. The lowest sheet resistivity was 100 Ω/□, about 10 times the resistivity of a comparable amount of CoSi2. Contact resistivities, measured by the transmission line method, were as low as 2 × 10−5 Ω cm2. There is a large discrepancy between contact resistivities measured by transmission line and 4 point Kelvin test structures that may be due to the fabricated contact sizes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 323
Copyright
Copyright © Materials Research Society 1994

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References

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