Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-05-13T05:21:25.594Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of Planar and Cross-Sectional TEM Specimens Using a Focused Ion Beam

Published online by Cambridge University Press:  16 February 2011

R. J. Young ,
E. C. G. Kirk ,
D. A. Williams  and
H. Ahmed
R. J. Young
Affiliation:
Microelectronics Research Centre, Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, U.K.
E. C. G. Kirk
Affiliation:
Microelectronics Research Centre, Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, U.K.
D. A. Williams
Affiliation:
Microelectronics Research Centre, Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, U.K.
H. Ahmed
Affiliation:
Microelectronics Research Centre, Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, U.K.
Get access

Abstract

A new technique using a focused ion beam has been developed for the fabrication of transmission electron microscopy specimens in pre-selected regions. The method has been proven in the fabrication of both cross-sectional and planar specimens, with no induced artefacts. The lateral accuracy achievable in the selection of an area for cross-sectional analysis is better than one micrometre. The technique has been applied to a number of silicon and III-V based integrated circuits, and is expected to be suitable for many other materials and structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 199: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials II , 1990 , 205
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ochiai, Y., Gamo, K., and Namba, S., J.Vac.Sci.Technol. B3, 67 (1985).Google Scholar
2. Young, R.J., Cleaver, J.R.A., and Ahmed, H., Microelectron.Eng. (in press).Google Scholar
3. Levi-Setti, R., in Scanning Electron Microscopy, (SEM Inc., AMF O'Hare, Chicago Il, 1983), p 1.Google Scholar
4. Weast, R.C. in Handbook of Chemistry and Physics, 56th ed. (CRC Press, 1975), p. D183.Google Scholar
5. Franklin, R.E., Kirk, E.C.G., Cleaver, J.R.A., and Ahmed, H., J.Mat.Sci.Lett. 2, 39 (1988).Google Scholar
6. Kirk, E.C.G., Cleaver, J.R.A., and Ahmed, H., Inst.Phys.Conf. Ser. 87 (11), 691 (1987).Google Scholar
7. Kirk, E.C.G., Williams, D.A., and Ahmed, H., Inst.Phys.Conf. Ser. 100 (7), 501 (1989).Google Scholar
8. McMahon, R.A., Microelectron.Eng. 8, 255 (1988).Google Scholar