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Fabrication of Optical Channel Waveguides in the GaAs/AlGaAs System by Mev Ion Beam Bombardment

Published online by Cambridge University Press:  16 February 2011

T. Taylor ,
D. Ila ,
R. L. Zimmerman ,
P. R. Ashley  and
D. B. Poker
T. Taylor
Affiliation:
Center for Irradiation of Materials, Alabama A& M University, Department of Physics Normal, Alabama 35762
D. Ila
Affiliation:
Center for Irradiation of Materials, Alabama A& M University, Department of Physics Normal, Alabama 35762
R. L. Zimmerman
Affiliation:
Center for Irradiation of Materials, Alabama A& M University, Department of Physics Normal, Alabama 35762
P. R. Ashley
Affiliation:
Weapons Sciences Directorate Research, Development and Engineering Center, U. S. Army Missile Command Redstone Arsenal, Alabama 35898
D. B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory Oak Ridge, Tennessee 37831
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Abstract

We have fabricated optical channel waveguides in planar GaAs/AlGaAs waveguides using 10 MeV oxygen ions at a fluence of 3x1013 and 3x1014 ions/cm2. Although disordering of GaAs/AlGaAs quantum well structures has previously been reported, to the best of the authors' knowledge the fabrication of channel waveguides using high energy oxygen bombardment has not been demonstrated in this material system. This technique may provide a totally new concept of localized material modifications in GaAs/AlGaAs waveguides by creating compositional disordered regions that act as optical confinement channels. The masking technique used to provide selective disordering of the planar waveguide structures will be presented. Optical measurements were performed on the channel waveguides at a wavelength of 1.3 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 373: Symposium Y – Microstructure of Irradiated Materials , 1994 , 457
Copyright
Copyright © Materials Research Society 1995

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References

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