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Fabrication of Integrated Ferrite/Semiconductor Circulators

Published online by Cambridge University Press:  10 February 2011

S. A. Oliver
Affiliation:
Center for Electromagnetic Research, Northeastern University, Boston MA 02115, saoliver@neu.edu
H. How
Affiliation:
ElectroMagnetic Applications Inc., Boston MA
P. Shi
Affiliation:
Department of Electrical and Computer Engineering, Northeastern University, Boston MA 02115
W. Hu
Affiliation:
Department of Electrical and Computer Engineering, Northeastern University, Boston MA 02115
I. Kozulin
Affiliation:
Department of Electrical and Computer Engineering, Northeastern University, Boston MA 02115
N. E. McGruer
Affiliation:
Department of Electrical and Computer Engineering, Northeastern University, Boston MA 02115
P. M. Zavracky
Affiliation:
Department of Electrical and Computer Engineering, Northeastern University, Boston MA 02115
C. Vittoria
Affiliation:
Department of Electrical and Computer Engineering, Northeastern University, Boston MA 02115
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Abstract

Integrated planar circulator circuits operating at frequencies near 10 GHz have been fabricated using transferred film techniques. A 100 micrometer thick film of single-crystal yttrium iron garnet was transferred onto a metallized silicon die using a bond and lap-back process. The alloy bond layer was formed through a low-temperature solid-liquid interdiffusion process using films of indium and gold. This bond layer proved of sufficient strength to permit removal of the gadolinium gallium garnet substrate through grinding, but chemical analysis of the bond shows that interdiffusion occurs between the bond and metallization layers. These integrated gamet/silicon circulator circuits show good device performance.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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