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Fabrication of GaAs/AlGaAs Quantum Well Lasers with MeV Oxygen Ion Implantation*

Published online by Cambridge University Press:  26 February 2011

Fulin Xiong ,
T. A. Tombrello ,
H. Wang ,
T. R. Chen ,
H. Z. Chen ,
H. Morkoc  and
A. Yariv
Fulin Xiong
Affiliation:
Divisions of Physics, Mathematics and Astronomy, and Engineering and Applied Sciences, 200–36, California Institute of Technology, Pasadena, CA 91125
T. A. Tombrello
Affiliation:
Divisions of Physics, Mathematics and Astronomy, and Engineering and Applied Sciences, 200–36, California Institute of Technology, Pasadena, CA 91125
H. Wang
Affiliation:
Divisions of Physics, Mathematics and Astronomy, and Engineering and Applied Sciences, 200–36, California Institute of Technology, Pasadena, CA 91125
T. R. Chen
Affiliation:
Divisions of Physics, Mathematics and Astronomy, and Engineering and Applied Sciences, 200–36, California Institute of Technology, Pasadena, CA 91125
H. Z. Chen
Affiliation:
Divisions of Physics, Mathematics and Astronomy, and Engineering and Applied Sciences, 200–36, California Institute of Technology, Pasadena, CA 91125
H. Morkoc
Affiliation:
Divisions of Physics, Mathematics and Astronomy, and Engineering and Applied Sciences, 200–36, California Institute of Technology, Pasadena, CA 91125
A. Yariv
Affiliation:
Divisions of Physics, Mathematics and Astronomy, and Engineering and Applied Sciences, 200–36, California Institute of Technology, Pasadena, CA 91125
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Abstract

MeV oxygen ion implantation in GaAs/AlGaAs has been shown to provide a simple and very promising technique for quantum well laser fabrication. A l0μm stripe single quantum well (SQW) graded-index separation confinement heterostructure (GRINSCH) laser made in this way has achieved high performance with high quantum differential efficiency, low threshold current and good electrical isolation characteristics. MeV oxygen ion implantation with optimum thermal annealing produces a deep buried electrical isolation layer in n-type GaAs and reduces optical absorption in GaAs/AlGaAs quantum well structures. Ion implantation stimulated compositional disordering as well as implanted oxygen-related deep level traps may be considered as important effects for electrical and optical modification of interfaces in GaAs and AIGaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 367
Copyright
Copyright © Materials Research Society 1989

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Footnotes

*

Support in part by National Science Foundation [DMR86-15641]

References

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