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The Fabrication and Characterization of Amorphous Indium Zinc Oxide (In2O3:10wt%ZnO) based Thin Film Transistors

Published online by Cambridge University Press:  26 February 2011

Burag Yaglioglu ,
Hyo-Young Yeom ,
Roderic Beresford  and
David Paine
Burag Yaglioglu
Affiliation:
Burag_Yaglioglu@Brown.Edu, Brown University, Engineering, Barus&Holley, 182 Hope Street, Providence, Rhode Island, 02912, United States, (401) 863 3951
Hyo-Young Yeom
Affiliation:
Hyo-Young_Yeom@Brown.EDU, Brown University, Division of Engineering
Roderic Beresford
Affiliation:
J_Beresford@Brown.EDU, Brown University, Division of Engineering, United States
David Paine
Affiliation:
David_Paine@Brown.Edu, Brown University, Division of Engineering, United States
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Abstract

Thin film transistors were fabricated using amorphous IZO (In2O3-10wt%ZnO) with low carrier concentration (∼3×1017/cm3) for the channel material and a-IZO with high carrier concentration (∼2×1020/cm3) for source-drain metallization. The performance of a-IZO channel materials processed entirely at room temperature was established using a simple gate-down thin film transistor device. The TFT test structures were fabricated on p-type Si substrates with a thermally grown SiO2 gate oxide. The channel and metallization layers were sputter deposited from a commercially available IZO target at room temperature in a gas atmosphere containing 10 vol.% and 0 vol.% oxygen, respectively. The TFT devices are depletion mode n-channel devices with a high saturation mobility (∼20cm2/Vs) and high on/off ratio (∼108) and, as such, appear to be well suited for active matrix TFT applications.

Keywords

transparent conductoramorphousdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 905: Symposium DD – Materials for Transparent Electronics , 2005 , 0905-DD03-06
Copyright
Copyright © Materials Research Society 2006

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References

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