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Extraction of Altered Localized-States in a-Si and poly-Si TFT’s Under Various Conditions

Published online by Cambridge University Press:  01 January 1993

J.R. Hwang ,
J.S. Park ,
M.C. Jun ,
J. Jang  and
M.K. Han
J.R. Hwang
Affiliation:
Department of Electrical Engineering,Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
J.S. Park
Affiliation:
Department of Electrical Engineering,Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
M.C. Jun
Affiliation:
Department of Electrical Engineering,Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
J. Jang
Affiliation:
Department of Physics, Kyung-Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
M.K. Han
Affiliation:
Department of Electrical Engineering,Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
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Abstract

We present results regarding to extraction of altered localized-states in both amorphous silicon and polycrystalline silicon thin film transistors under various conditions, such as electrical and light stress, crystallization, and hydrogenation. Both deep and tail states have been extracted by fitting calculated current-voltage curves to measured data. The density of deep states as well as tail states in a-Si are significantly increased by stress, which may be the predominant mechanism causing the degradation in a-Si TFT performances. Also, the correlations between trap distributions in poly-Si films and their device performances have been successfully identified by analyzing the effects of crystallization and hydrogenation on the current-voltage characteristics of poly-Si TFT’s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 913
Copyright
Copyright © Materials Research Society 1993

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References

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