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Extended Defects in Amorphized and Rapid-Thermally Annealed Silicon

Published online by Cambridge University Press:  26 February 2011

D. M. Maher ,
R. V. Knoell ,
M. B. Ellington  and
D. C. Jacobson
D. M. Maher
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA
R. V. Knoell
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA
M. B. Ellington
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974, USA
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Abstract

The characterization of microstructures is fundamentally important to investigations of amorphization which is induced by ion implantation and recrystallization which occurs by solid-phase, epitaxial regrowth. In this paper, microstructures of amorphized, partially regrown and fully regrown layers are described in terms of extended-defect states of the material. Initial states (i.e. amorphized) and final states (i.e. solid-phase regrown and then reordered) are defined. Transmission electron microscopy and Rutherford backscattering/ion-channeling are the analytical techniques which are used in the characterization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 93
Copyright
Copyright © Materials Research Society 1986

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