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Explosive Crystallization in Eutectic Materials of Phase Change Optical Memory

Published online by Cambridge University Press:  01 February 2011

Masahiro Okuda ,
Hirokazu Inaba  and
Shouji Usuda
Masahiro Okuda
Affiliation:
Okuda Technical Office, 1-chome 2–27 Mozu Umemachi sakai, Osaka 591–8032, Japan phone:+81–72–257–9244, fax:+81–72–257–9244, e-mail:okudaxma@skyblue.ocn.ne.jp
Hirokazu Inaba
Affiliation:
Osaka Prefecture University, 1–1 Gakuen-cho Sakai, Osaka 599–8531, Japan
Shouji Usuda
Affiliation:
Osaka Prefectural College of Technology, 26–12 Saiwai-cho Neyagawa Osaka 572–0017, Japan
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Abstract

The excess Sb effect for the dynamics of rapid crystallization in eutectic amorphous films are discussed. This crystallization mechanism describe the propagation with high velocity in the interface separating the crystalline and amorphous phase for InSb and AgInSbTe materials. From these analysis, it is clear that the crystallization is grown up in the boundary of crystalline-amorphous region of eutectic materials, which is different from the stoichiometric GeSbTe media. Also, the quantum effect on the melting, crystallization and solidification of phase change media has been discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 803: Symposia GG/HH – Advanced Characterization Techniques for Data Storage Materials – Phase Change and Nonmagnetic Materials for Data Storage , 2003 , HH5.1
Copyright
Copyright © Materials Research Society 2004

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References

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