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Experimental Results and Modeling of the Codiffusion of Donors and Acceptors in Si
Published online by Cambridge University Press: 15 February 2011
Abstract
A model based on ion pairing for the simulation of donor and acceptor codiffusion in silicon is presented. The proposed model allows us to obtain a good agreement with the experimental profiles over a wide range of diffusion conditions, specially at high concentrations where the standard process simulator codes give results strongly inaccurate. Comparison of the simulations with new and literature codiffusion profiles is provided.
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- Research Article
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- Copyright © Materials Research Society 1995
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