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Experimental Observation of Sequential Tunneling Transport in GaN/AlGaN Coupled Quantum Wells Grown on a Free-Standing GaN Substrate

Published online by Cambridge University Press:  31 January 2011

Faisal Sudradjat ,
Kristina Driscoll ,
Yitao Liao ,
Anirban Bhattacharyya ,
Christos Thomidis ,
Lin Zhou ,
David J. Smith ,
Theodore D. Moustakas  and
Roberto Paiella
Faisal Sudradjat
Affiliation:
ffsudrad@bu.edu, Boston University, Boston, Massachusetts, United States
Kristina Driscoll
Affiliation:
kd8@bu.edu, Boston University, Boston, Massachusetts, United States
Yitao Liao
Affiliation:
yitao@bu.edu, Boston University, Boston, Massachusetts, United States
Anirban Bhattacharyya
Affiliation:
anirban1@gmail.com, United States
Christos Thomidis
Affiliation:
cthomidi@bu.edu, Boston University, Boston, Massachusetts, United States
Lin Zhou
Affiliation:
lzhou5@asu.edu, Arizona State University, Tempe, Arizona, United States
David J. Smith
Affiliation:
david.smith@asu.edu, Arizona State University, Tempe, Arizona, United States
Theodore D. Moustakas
Affiliation:
tdm@bu.edu, Boston University, Boston, Massachusetts, United States
Roberto Paiella
Affiliation:
rpaiella@bu.edu
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Abstract

A GaN/AlGaN multiple-quantum-well structure based on an asymmetric triple-quantum-well repeat unit was grown by molecular beam epitaxy, and its vertical electrical transport characteristics were investigated as a function of temperature. To minimize the density of dislocations and other structural defects providing leakage current paths, homoepitaxial growth on a free-standing GaN substrate was employed. The measured vertical-transport current-voltage characteristics were found to be highly nonlinear, especially at low temperatures, consistent with sequential tunneling through the ground-state subbands of weakly coupled adjacent quantum wells. Furthermore, different turn-on voltages were measured depending on the polarity of the applied bias, in accordance with the asymmetric subband structure of the sample repeat units.

Keywords

epitaxynitrideelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I09-20
Copyright
Copyright © Materials Research Society 2010

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References

1 Gmachl, C., Ng, H. M., Chu, S.-N. G., and Cho, A. Y., Appl. Phys. Lett. 77, 3722 (2000).Google Scholar
2 Iizuka, N., Kaneko, K., and Suzuki, N., IEEE J. Quantum Electron. 42, 765 (2006).Google Scholar
3 Li, Y., Bhattacharyya, A., Thomidis, C., Moustakas, T. D., and Paiella, R., Opt. Express 15, 5860 (2007).Google Scholar
4 Nevou, L., Tchernycheva, M., Julien, F. H., Guillot, F., and Monroy, E., Appl. Phys. Lett. 90, 121106 (2007).Google Scholar
5 Vardi, A., Bahir, G., Guillot, F., Bougerol, C., Monroy, E., Schacham, S. E., Tchernycheva, M., and Julien, F. H., Appl. Phys. Lett. 92, 011112 (2008).Google Scholar
6 Driscoll, K., Liao, Y., Bhattacharyya, A., Zhou, L., Smith, D. J., Moustakas, T. D., and Paiella, R., Appl. Phys. Lett. 94, 081120 (2009).Google Scholar
7 Sirtori, C., Capasso, F., Faist, J., Hutchinson, A. L., Sivco, D. L., and Cho, A. Y., IEEE J. Quantum Electron. 34, 1722 (1998).Google Scholar
8 Kikuchi, A., Bannai, R., Kishino, K., Lee, C.-M., and Chyi, J.-I., Appl. Phys. Lett. 81, 1729 (2002).Google Scholar
9 Belyaev, A. E., Makarovsky, O., Walker, D. J., Eaves, L., Foxon, C. T., Novikov, S. V., Zhao, L. X., Dykeman, R. I., Danylyuk, S. V., Vitusevich, S. A., Kappers, M. J., Barnard, J. S., and Humphreys, C. J., Physica E 21, 752 (2004).Google Scholar
10 Golka, S., Pflügl, C., Schrenk, W., Strasser, G., Skierbiszewski, C., Siekacz, M., Grzegory, I., and Porowski, S., Appl. Phys. Lett. 88, 172106 (2006).Google Scholar
11 Molnar, R. J., Lei, T., and Moustakas, T. D., Appl. Phys. Lett. 62, 72 (1993).Google Scholar
12 Vurgaftman, I. and Meyer, J. R., J. Appl. Phys. 94, 3675 (2003).Google Scholar
13 Gunna, S., Bertazzi, F., Paiella, R., and Bellotti, E., in Nitride Semiconductor Devices: Principles and Simulations, edited by Piprek, J. (Wiley, 2007), chapter 6.Google Scholar