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Experimental Investigation of Transient Enhanced Diffusion (TED) of Phosphorus Implants in Silicon in the MeV Range

Published online by Cambridge University Press:  15 February 2011

Lahir S. Adam  and
Mark E. Law
Lahir S. Adam
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, mlahir@tcad.ee.ufl.edu
Mark E. Law
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, mlahir@tcad.ee.ufl.edu
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Abstract

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Prior work has concentrated on TED resulting from sub 200 KeV implants. However, the results applicable to the low energy regime cannot be extrapolated per se into the high energy regime. Furnace anneals have been performed and through simulations it has been observed that there is a differential diffusivity enhancement between the part of the profile before the profile peak and that beyond the profile peak. Longer saturation times compared to the low energy implants have also been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 309
Copyright
Copyright © Materials Research Society 1997

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References

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