Hostname: page-component-788cddb947-nxk7g Total loading time: 0 Render date: 2024-10-15T12:03:19.917Z Has data issue: false hasContentIssue false
  • English
  • Français

Excitonic Mechanism of Rare Earth Excitation in II-VI and IH-V Semiconductors

Published online by Cambridge University Press:  03 September 2012

Marek Godlewski
Marek Godlewski*
Affiliation:
Institute of Physics, Polish Academy of Sciences 02–668 Warsaw, Al. Lotników 32/46, Poland
Get access

Abstract

In this paper we analyze processes which may improve the efficiency of low- and high- field electroluminescence devices based on rare earth doped II-VI and III-V semiconductors. The main topicsare the processes which follow impact ionization, i.e., carrier trapping and/or exciton binding. Excitonic excitation mechanism is shown to occur also for ions which are not directly ionized, as observed recently for some rare earth impurities in II-VI and III-V semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 513
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Matsushita, Y., Nakata, T., Uetani, T., Yamaguchi, T. and Niina, T., J. App1. Phys. 29, L343 (1990).Google Scholar
[2] Pankove, J. I., Miller, E. A. and Berkeyheiser, J. E., J. Luminescence 5, 84 (1973).Google Scholar
[3] Park, R. M., TrofFer, M. B., Rouleau, C. M., DePuydt, J. M. and Haase, M. A., Appl. Phys. Lett. 57, 2127 (1990).Google Scholar
[4] Destriau, G., J. de Chimie Physique 33, 587 (1936).Google Scholar
[5] Inoguchi, T., Takeda, M., Kahikara, Y., Nakata, Y. and Yoshida, M., SID Intern. Symp. Dig. 1974, p. 86 Google Scholar
[6] Galtier, P., Pocholle, J. P., Charasse, M. N., de Cremoux, B., Hirtz, J. P., Groussin, B., Benyattou, T. and Guillot, G., Appl. Phys. Lett. 55, 2105 (1989).Google Scholar
[7] Kobayashi, H., Tanaka, S., Sasakura, H. and Hamakawa, Y., Jpn. J. Appl. Phys. 13, 1110 (1974).Google Scholar
[8] Krupka, D. C., J. Appl. Phys. 43, 476 (1972).Google Scholar
[9] Allen, J. W., in Electroluminescence, Springer Proc. in Physics 38, eds. Shionoya, S. and Kobayashi, H. (Springer, Berlin, 1989), p. 10.Google Scholar
[10] Krupka, D. C. and Rochkind, M. M., J. Appl. Phys. 41, 194 (1972).Google Scholar
[11] Krupka, D. C. and Mahoney, D. M., J. Appl. Phys. 43, 2314 (1972).CrossRefGoogle Scholar
[12] Allen, J. W., J. Phys. C19, 6287 (1986).Google Scholar
[13] Gordon, N. T. and Allen, J. W., Solid State Commun. 37, 1441 (1981).Google Scholar
[14] Ayling, S. G. and Allen, J. W., J. Phys. C20, 4251 (1987).Google Scholar
[15] Suchocki, A. and Langer, J. M., Phys. Rev. B39, 7905 (1989).Google Scholar
[16] Langer, J. M., Suchocki, A., Hong, Le Van, Ciepielewski, P. and Walukiewicz, W., Physica B117/118, 152 (1983).Google Scholar
[17] Langer, J. M. and Hong, Le Van, J. Phys. c17, L923 (1984).Google Scholar
[18] Klein, P. B., Furneaux, J. E. and Henry, R. L., Phys. Rev. B4, 8993 (1986).Google Scholar
[19] Tanaka, S., Yoshiyama, H., Mikami, Y., Nishiura, J., Ohshio, S., Deguchi, H. and Kobayashi, H., Appl. Phys. Lett. 50, 119 (1987).Google Scholar
[20] Tanaka, S., Ohshio, S., Nishiura, J., Kawakami, H., Yoshiyama, H. and Kobayashi, H., Appl. Phys. Lett. 52, 2102 (1988).Google Scholar
[21] Godlewski, M. and Hommel, D., Phys. Status Solidi (a) 95, 261 (1986).CrossRefGoogle Scholar
[22] Światek, K., Godlewski, M. and Hommel, D., Phys. Rev. B42, 3628 (1990).Google Scholar
[23] Światek, K. and Godlewski, M., J. Luminescenece (in press).Google Scholar
[24] Przybylińska, H., Światek, K., Stąpor, A., Suchocki, A. and Godlewski, M., Phys. Rev. B40, 1748 (1989).Google Scholar
[25] Title, R. S., Phys. Rev. Lett. 3, 273 (1959).Google Scholar
[26] Światek, K., Godlewski, M. and Hommel, D., Phys. Rev. B43, 9955 (1991).Google Scholar
[27] Zimmermann, H. and Boyn, R., Phys. Status Solidi (b) 135, 379 (1986).Google Scholar
[28] Ando, M. and Ono, Y. A., J. Appl. Phys. 68, 3578 (1990); 69, 7225 (1991).CrossRefGoogle Scholar
[29] Jörgensen, C. K., Molecular Physics 5, 3 (1962).Google Scholar
[30] Światek, K., Suchocki, A. and Godlewski, M., Appl. Phys. Lett. 56, 195 (1990).Google Scholar
[31] Delerue, C. and Lannoo, M., Phys. Rev. Lett. 67, 3006 (1991).Google Scholar
[32] Hemstreet, L. A., in Materials Science Forum vols. 10–12, ed. von Bardeleben, H. J. (Trans Tech. Publications, Switzerland, 1986) p. 85.Google Scholar
[33] Körber, W., Weber, J., Hangleiter, A., Benz, K. W., Ennen, H. and Müller, H. D., J. Cryst. Growth 79, 741 (1986).Google Scholar
[34] Whitney, P. S., Uwai, K., Nakagome, H. and Takahei, H., Appl. Phys. Lett. 53, 2074 (1988).CrossRefGoogle Scholar
[35] Lambert, B., Toudic, Y., Grandpierre, G., Rupert, A. and Le Corre, A., Electron. Lett. 24, 1446 (1988).Google Scholar
[36] Takahei, K., Taguchi, A., Nakagome, H., Uwai, K. and Whitney, P. S., J. Appl. Phys. 66, 4941 (1989).Google Scholar
[37] Thonke, K., Préssel, K., Bohnert, G., Stąpor, A., Weber, J., Moser, M., Molassioti, A., Hangleiter, A. and Scholz, F., Semicond. Sci. Technol. 5, 1124 (1990).Google Scholar
[38] Heijmink Liesert, B. J., Godlewski, M., Stapor, A., Gregorkiewicz, T., Ammerlaan, C. A. J., Weber, J., Moser, M. and Scholz, F., Appl, Phys. Lett. 58, 2237 (1991).Google Scholar
[39] Godlewski, M., Światek, K., Suchocki, A. and Langer, J. M., J. Luminescence 48/49, 23 (1991).Google Scholar
[40] Godlewski, M. and Swiatek, K., Proc. 4th Intern. Conf. on II-VI Compounds (Tamano 1991), J. Cryst. Growth 117, 634 (1992).Google Scholar
[41] Robbins, D. J. and Dean, P. J., Adv. Phys. 27, 499 (1978).Google Scholar
[42] McClure, D. S. and Pedrini, C., Phys. Rev. B32, 8465 (1985).Google Scholar
[43] Robbins, D. J., J. Luminescence 24/25, 137 (1981).Google Scholar
[44] Dean, P. J., Robbins, D. J., Bishop, S. G., Savage, J. A. and Porteous, P., J. Phys. C14, 2847 (1981).Google Scholar
[45] Lambert, B., Le Corre, A., Toudic, Y., Lhomer, C., Grandpierre, G. and Gauneau, M., J. Phys.: Condens. Matter 2, 479 (1990).Google Scholar
[46] Godlewski, M., Heijmink Liesert, B. J., Gregorkiewicz, T. and Ammerlaan, C. A. J., in Materials Science Forum vols. 83/87, ed. Davies, G., DeLeo, G. G. and Stavola, M. (Trans Tech Publications, Switzerland, 1992), p. 683.Google Scholar
[47] Bryant, F. J., Goodwin, G. D. and Lowther, J. E., J. Phys. C5, 2669 (1972).Google Scholar
[48] Heijmink Liesert, B. J., Godlewski, M., Gregorkiewicz, T. and Ammerlaan, C. A. J., Appl. Phys. Lett. 59, 3279 (1991).Google Scholar
[49] Hoffmann, A., Lummer, B., Fricke, Ch., Heitz, R. and Broser, I., Proc. 4th Intern. Conf. on II-VI Compounds (Tamano 1991), J. Cryst. Growth 117, 640 (1992).Google Scholar
[50] Swiatek, K. and Godlewski, M., Appl. Phys. Lett. 56, 2192 (1990).Google Scholar