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Exafs characterisation of amorphous GaAs

Published online by Cambridge University Press:  10 February 2011

M. C. Ridgway ,
C. J. Glover ,
G. J. Foran  and
K. M. Yu
M. C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
C. J. Glover
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
G. J. Foran
Affiliation:
Australian Nuclear Science and Technology Organisation, Menai, Australia
K. M. Yu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, USA
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Abstract

The structural parameters of stoichiometric, amorphous GaAs have been determined with extended x-ray absorption fine structure (EXAFS) measurements performed in transmission mode at 10K. Amorphous GaAs samples were fabricated with a combination of epitaxial growth, ion implantation and selective chemical etching. Relative to a crystalline sample, the nearest-neighbor bond length and Debye-Waller factor both increased for amorphous material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to ˜3.85 atoms from the crystalline value of four. All structural parameters were independent of implantation conditions and as a consequence, were considered representative of intrinsic, amorphous GaAs as opposed to an implantation-induced extrinsic structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 524: Symposium V – Application of Synchrotron Radiation Techniques…IV , 1998 , 303
Copyright
Copyright © Materials Research Society 1998

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References

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