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Evolution of Electrical Properties with Thermal Annealing for Seeded Heteroepitaxial InN Thin Films

Published online by Cambridge University Press:  25 February 2011

Wayne A. Bryden ,
Scott A. Ecelberger  and
Thomas J. Kistenmacher
Wayne A. Bryden
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20723–6099
Scott A. Ecelberger
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20723–6099
Thomas J. Kistenmacher
Affiliation:
Applied Physics Laboratory, The Johns Hopkins University, Laurel, MD 20723–6099
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Abstract

Two related studies of the effects of elevated temperature annealing on reactive rf magnetron sputtered InN films have been conducted. In the first study, thin films of InN were deposited and annealed in 5 mTorr of nitrogen gas using a conventional high-vacuum (HV) magnetron sputtering system. Films were grown at 100°C and following annealing at an elevated temperature (Ta) for 4 hours were removed from the system for physical characterization. The physical properties of the annealed films improved with thermal treatment and were strikingly coincident with the properties of a second set of films grown at Ta. In the second study, films were deposited at 400°C in 5 mTorr of nitrogen gas using an ultrahigh-vacuum (UHV) sputtering system. Samples were annealed (at 550°C) and electrically characterized under UHV conditions using a custom designed annealing furnace with an integral Van der Pauw probe. Contrary to expectations, the carrier concentration of these films showed a steady decrease with extended annealing and the carrier mobility nearly doubled after 15 hours of treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 509
Copyright
Copyright © Materials Research Society 1993

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References

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