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The Evolution of Chem-Mechanical Planarization: From Aberrant to Prosaic

Published online by Cambridge University Press:  25 February 2011

Peter Renteln  and
John Coniff
Peter Renteln
Affiliation:
National Semiconductor Corp., 2900 Semiconductor Dr., M/S E-100, Santa Clara, CA 95052
John Coniff
Affiliation:
National Semiconductor Corp., 2900 Semiconductor Dr., M/S E-100, Santa Clara, CA 95052
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Abstract

Chem-Mechanical Planarization (CMP) is a rapidly growing technology in the semiconductor fabrication repertoire. Initially offering an answer to the need for truly global planarization brought about by optical steppers' ever decreasing Depth of Focus (DOF), CMP may come to stay more for its impressive ability to actually decrease defect density, as well as potentially reduce the contact resistance of Tungsten plugs. But even the use of CMP at this post-etchback step first requires a manufacturable oxide planarization CMP technology, the single most difficult challenge of all the different CMP applications. In this presentation, We will describe various remaining mysteries of some of the more fundamental questions involving the process in addition to some present manufacturing issues.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 105
Copyright
Copyright © Materials Research Society 1994

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References

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