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Evolution of Buried Cobalt Silicide Layers Formed by Co Implantation in Si(111)

Published online by Cambridge University Press:  25 February 2011

Yong-Fen Hsieh ,
Robert Hull ,
Alice E. White  and
Ken T. Short
Yong-Fen Hsieh
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Robert Hull
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Alice E. White
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Ken T. Short
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Coalescence and microstructure of buried CoSi2 layers formed by 100 keV Co+ implantation at 350°C into Si(111) are studied. Doses ranged from 1×1016 to 1.6×l017 cm−2. The critical dose (dc) required to form a continuous layer is found to be the same, 1.1±0.1×l017 cm−2, in both (111) and (001) substrates, despite pronounced differences in precipitate morphology. Three types of precipitates are observed in Si(111) during the mesotaxial process: A–type (fully aligned), B0–type (twinned on the (111) plane parallel to the surface), and B1,2,3–type (twinned on one of the three (111) planes inclined to the surface). The fraction of each varies with both the implantation and annealing conditions. Formation of a continuous, twinned (B0–type), buried layer after 1000°C annealing is shown to be possible for the first time by this synthesis technique in samples implanted at dc.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 665
Copyright
Copyright © Materials Research Society 1991

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References

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