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Evidence of Reduced Self Heating with Partially Depleted SOI MOSFET Scaling

Published online by Cambridge University Press:  01 February 2011

Georges Guegan ,
Romain Gwoziecki ,
Olivier Gonnard ,
Gilles Gouget ,
Christine Raynaud ,
Mikael Casse  and
Simon Deleonibus
Romain Gwoziecki
Affiliation:
romain.gwoziecki@st.com, CEA-DRT-LETI, GRENOBLE Cedex 9, N/A, 38054, France
Olivier Gonnard
Affiliation:
olivier.gonnard@st.com, STMicroelectronics, CROLLES, N/A, 38920, France
Gilles Gouget
Affiliation:
gilles.gouget@st.com, STMicroelectronics, CROLLES, N/A, 38920, France
Christine Raynaud
Affiliation:
christine.raynaud@st.com, CEA-DRT-LETI, GRENOBLE Cedex 9, N/A, 38054, France
Mikael Casse
Affiliation:
mikael.casse@cea.fr, CEA-DRT-LETI, GRENOBLE Cedex 9, 38054, France
Simon Deleonibus
Affiliation:
sdeleonibus@cea.fr, CEA-DRT-LETI, GRENOBLE Cedex 9, N/A, 38054, France
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Abstract

The temperature rise in SOI has been measured on two successive generations. This work shows that self-heating effects become less and less severe with both MOSFET and power supply voltage scaling.

Keywords

microelectronicsSithermal conductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D03-02
Copyright
Copyright © Materials Research Society 2006

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References

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