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Evaluation of Vacancy-Type Defects in Simox Substrates by a Slow Positron Beam and a Pulsed Positron Beam

Published online by Cambridge University Press:  03 September 2012

H. Kametani ,
H. Akiyama ,
Y. Yamaguchi ,
M. Koumaru ,
L. Wei ,
Y. Tabuki ,
S. Tanigawa ,
A. Uedono ,
S. Watauchi  and
Y. Ujihira
...Show all authors
H. Kametani
Affiliation:
Mitubishi Electric Corporation, Tsukaguchi-Honmachi, Amaga-saki, Hyogo 661, Japan
H. Akiyama
Affiliation:
Mitubishi Electric Corporation, Tsukaguchi-Honmachi, Amaga-saki, Hyogo 661, Japan
Y. Yamaguchi
Affiliation:
Mitubishi Electric Corporation, Tsukaguchi-Honmachi, Amaga-saki, Hyogo 661, Japan
M. Koumaru
Affiliation:
Mitubishi Electric Corporation, Tsukaguchi-Honmachi, Amaga-saki, Hyogo 661, Japan
L. Wei
Affiliation:
Institute of Material Science, University of Tukuba, Tennou-dai, Tsukuba, Ibaragi 305, Japan
Y. Tabuki
Affiliation:
Institute of Material Science, University of Tukuba, Tennou-dai, Tsukuba, Ibaragi 305, Japan
S. Tanigawa
Affiliation:
Institute of Material Science, University of Tukuba, Tennou-dai, Tsukuba, Ibaragi 305, Japan
A. Uedono
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, Hongo, Bunkyou-ku, Tokyo 113, Japan
S. Watauchi
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, Hongo, Bunkyou-ku, Tokyo 113, Japan
Y. Ujihira
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, Hongo, Bunkyou-ku, Tokyo 113, Japan
R. Suzuki
Affiliation:
Electrotechnical Laboratory, Umezono, Tsukuba, Ibaragi 305, Japan
H. Ohgaki
Affiliation:
Electrotechnical Laboratory, Umezono, Tsukuba, Ibaragi 305, Japan
T. Mikado
Affiliation:
Electrotechnical Laboratory, Umezono, Tsukuba, Ibaragi 305, Japan
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Abstract

Slow/monoenergetic positron beams and pulsed positron beams have been used as a non-destructive probe to investigate vacancy-type defects in SIMOX substrates which were formed by high - dose oxygen implantation and high-temperature annealing. To obtain depth profiles of vacancy-type defects, a positron beam in the 0–30keV energy range was used. Doppler broadened annihilation spectrum and positron lifetime were measured as a function of incident positron energy. These measurements show the following results; vacancy -type defects exist near the surface of the top silicon layer even if the specimen was analyzed as defect -free Silicon by XTEM, and in the case of the as-implanted specimen, cavities in diameter of about 50–200A are created in the top silicon layer and they include high pressure gases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 235
Copyright
Copyright © Materials Research Society 1992

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References

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