Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-06-22T19:24:16.660Z Has data issue: false hasContentIssue false

Etch Rate and Surface Morphology of Plasma Etched Glass Substrates

Published online by Cambridge University Press:  17 March 2011

Junting Liu
Affiliation:
Cornell University, 214 Bard Hall, Ithaca, NY 14853, USA
Nikolay I. Nemchuk
Affiliation:
Cornell University, 214 Bard Hall, Ithaca, NY 14853, USA
Dieter G. Ast
Affiliation:
Cornell University, 214 Bard Hall, Ithaca, NY 14853, USA
J. Gregory Couillard
Affiliation:
Corning Incorporated, Corning, NY 14831, USA
Get access

Abstract

Micro-machined transparent components are of interest for optical MEMS and miniaturized biological systems. The glass ceramic GC6 developed by Corning is optically transparent, has a softening point in excess of 900°C, and a thermal expansion coefficient matched to silicon. These properties make it useful for the construction of devices that combine thin film silicon electronics with MEMS systems.

Both the ceramic precursor (green glass) and the glass ceramic etch at a similar rate, about 1/3 to 1/4 of that of SiO2 etched under the same conditions, indicating that chemistry rather than microstructure control the etch rate. The cleaning steps used to clean the glass precursor profoundly influence the degree of surface roughness that develops during subsequent plasma etching. In glass ceramics, the morphology of plasma etched surface is always very smooth and independent of the cleaning steps used. Assuming that the removal of spinel crystals is the rate limiting step in plasma etching glass ceramics can explain this observation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Pinckney, L.R., J. of Non-Cryst. Solids 255 (1999) 171 Google Scholar
[2] Krasulya, S.M., Nemchuck, N.I., Ast, D.G., the 197th Meeting of the Electrochemical Society, Abstract No. 508.Google Scholar
[3] Williams, Greg, Ph.D thesis, Cornell University, 1995 Google Scholar
[4] MIE recipe book, Cornell Nanofabrication FacilityGoogle Scholar
[5] Sze, S. M., “VLSI Technology”, McGraw -Hill Book Company, 1988, p.211 Google Scholar
[6] Couillard, J. G., Ast, D. G., Umbach, C., Blakely, J. M., Moore, C. B. and Fehlner, F. P., J. of Non-Cryst. Solids 222 (1997) 429 Google Scholar
[7] Kern, W., J.Electrochem.Soc 137 (1990) 1887 Google Scholar