Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-06-24T14:17:05.267Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxially Grown N+ Phosphorus Collector Peaks In Highfrequency hbt's with Implanted Emitters

Published online by Cambridge University Press:  10 February 2011

C. C. G Visser ,
L. K. Nanver  and
A. Van Den Bogaard
C. C. G Visser
Affiliation:
Laboratory of ECTM, DIMES, Delft University of Technology, Feldmannweg 17, 2628 CB Delft, The Netherlands, visser@dimes.tudelft.ni
L. K. Nanver
Affiliation:
Laboratory of ECTM, DIMES, Delft University of Technology, Feldmannweg 17, 2628 CB Delft, The Netherlands, visser@dimes.tudelft.ni
A. Van Den Bogaard
Affiliation:
Laboratory of ECTM, DIMES, Delft University of Technology, Feldmannweg 17, 2628 CB Delft, The Netherlands, visser@dimes.tudelft.ni
Get access

Abstract

The boron out-diffusion into the Si collector of SiGe HBT's with implanted emitters is compensated by an epitaxially grown n+ phosphorus peak effectively positioned adjacent to the as-grown boron peak. Detrimental barrier formation is suppressed in devices with base sheet resistance 3.3 k.Ω and cut-off frequency of 31 GHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 105
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nanver, L.K., Goudena, E.J.G., Visser, C.C.G., van Zeijl, H.W., and Slotboom, J.W., Proceedings 26thESSDERC, Bologna, Italy, 9–11 Sept., pp. 469–472 (1996).Google Scholar
2. Nanver, L.K., Visser, C.C.G., van den Bogaard, A., to appear in J. Vac. Sci. and Techn. B, June 1998.Google Scholar
3. Kamins, T.I., and Lefforge, D., J. Electrochem. Soc., 144, 2, 674 (1997).Google Scholar
4. Kuo, P., Hoyt, J.L., Gibbons, J.F., Turner, J.E., Jacowitz, R.D., and Kamins, T.I., Appi. Phys. Lett 62, 612 ( 1995).Google Scholar
5. Lever, R.F., Bonar, J.M. and Willoughby, A.F.W., J. Appl. Phys. 83, 4, 1988 (1988).Google Scholar