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Epitaxially Grown N+ Phosphorus Collector Peaks In Highfrequency hbt's with Implanted Emitters
Published online by Cambridge University Press: 10 February 2011
Abstract
The boron out-diffusion into the Si collector of SiGe HBT's with implanted emitters is compensated by an epitaxially grown n+ phosphorus peak effectively positioned adjacent to the as-grown boron peak. Detrimental barrier formation is suppressed in devices with base sheet resistance 3.3 k.Ω and cut-off frequency of 31 GHz.
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- Copyright © Materials Research Society 1998
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