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Epitaxial Silicon-Carbon Alloy Growth by Laser Induced Melting and Solidification

Published online by Cambridge University Press:  21 February 2011

Kenneth M. Kramer  and
Michael O. Thompson
Kenneth M. Kramer
Affiliation:
Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Michael O. Thompson
Affiliation:
Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Ion implantation of carbon into single-crystal silicon followed by excimer laser irradiation was used to create supersaturated, epitaxial SixC1-x. films. Crystallization proceeded from the underlying single-crystal silicon through the carbon containing layers at velocities of approximately 5 m/s. Characterization by high-resolution x-ray diffraction and Fourier-transform infrared absorption indicate that the carbon is found predominantly on substi-tutional lattice sites for concentrations up to 1.4 at.% C. Secondary-ion mass spectrometry profiles and numerical mass transfer calculations were used to estimate the diffusion coefficient of carbon in the liquid as 2-3 × 10−4cm2/s with a segregation coefficient greater than 0.4. Unusual diffusion behavior was observed for the carbon at 1.4 at.% C. At higher concentrations, evidence of SiC precipitates was observed in transmission electron microscope images and FTIR absorption spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 398: Symposium C – Thermodynamics and Kinetics of Phase Transformations , 1995 , 127
Copyright
Copyright © Materials Research Society 1998

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References

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