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Epitaxial Silicide Formation by Scanning Electron Beam Annealing

Published online by Cambridge University Press:  15 February 2011

Hiroshi Ishiwara  and
Hiroshi Yamamoto
Hiroshi Ishiwara
Affiliation:
Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama, 227Japan
Hiroshi Yamamoto
Affiliation:
Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama, 227Japan
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Abstract

Epitaxial growth of Pd2Si films on Si(lll) substrates by scanning cw electron beam annealing is investigated theoretically and experimentally. First, the nonlinear heat conduction equation is solved in a substrate with finite thickness to estimate the surface temperature during annealing. Then, the optimum growth conditions are experimentally determined, in which annealing parameters such as the beam current intensity, the scan speed, and the overlap width are changed. It has been shown by Rutherford backscattering and channeling techniques that the crystalline quality of the e-beam annealed Pd2Si films is somewhat worse than that of the furnace-annealed films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 437
Copyright
Copyright © Materials Research Society 1982

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References

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