Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-16T18:14:24.058Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of TiN on GaAs(100) by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 January 1992

Tsvetanka S. Zheleva ,
K. Jagannadham ,
A. Kumar  and
J. Narayan
Tsvetanka S. Zheleva
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
K. Jagannadham
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
A. Kumar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7916
Get access

Abstract

Epitaxial growth of TiN films on GaAs(100) by pulsed laser deposition has been studied. Excimer KrF laser (λ=248 nm, τ=30 ns) has been used for deposition of TiN films in a chamber maintained at vacuum of ≤ 10−6 torr. The microstructure of TiN films has been characterized by x-ray diffraction and transmission electron microscopy (TEM). Cross-sectional high resolution TEM showed a smooth unreacted interface between the single crystalline TiN film and GaAs. The predominant epitaxial relationship was found to be [110]TiN//[010]GaAs, (220)TiN//(040)GaAs at a substrate temperature of 350°C. Modelling of epitaxial growth showed that the interfacial energy is an important term responsible for 45° rotation of the TiN unit cell with respect to that of GaAs. The high strain energy associated with the coherent epilayer is reduced by domain epitaxial growth. These films were characterized using high-resolution TEM techniques, and experimental results were rationalized by thin film growth modeling.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 343
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Witmar, M., in Physics and Chemistry of Protective Coatings. edited by Lucovsky, G., (American Institutes of Physics, New York, 1986), p. 116.Google Scholar
2. Narayan, J., Tiwari, P., Chen, X., Singh, J., Chowdhari, R., Zheleva, T., Appl. Phys. Lett., 61, 1290 (1992).Google Scholar
3. Singh, R., Narayan, J., Phys. Rev. B, 41, 8843 (1990).Google Scholar
4. Zheleva, T., Jagannadham, K., Narayan, J., at the 1992 MRS Fall Meeting, Boston, MA, 1992.Google Scholar