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Epitaxial Growth of LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 Semiconductor/Ferroelectric/Conductor Heterostructures

Published online by Cambridge University Press:  17 March 2011

Woong Choi  and
Tim Sands
Woong Choi
Affiliation:
Department of Materials Science & Engineering, University of California, Berkeley, CA 94720
Tim Sands
Affiliation:
Department of Materials Science & Engineering, University of California, Berkeley, CA 94720
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Abstract

The feasibility of using LaVO3 as a semiconducting layer in all-oxide semiconductor/ferroelectric/conductor heterostructures was explored by growing epitaxial LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 heterostructures on (001) LaAlO3 single crystal substrates by pulsed laser deposition. A high degree of c-axis orientation and strong in-plane texture revealed by x-ray diffraction indicated the epitaxial crystallographic relationships between the layers. With a 30 nm layer of (Ba,Sr)TiO3, the heterostructure showed optimal ferroelectric hysteresis with remanent polarizations over 30 C/cm2. The capacitance measurement as a function of voltage might reveal the modulation of the depletion layer in the semiconducting LaVO3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C11.1.1
Copyright
Copyright © Materials Research Society 2002

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