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Epitaxial Growth of Ii-Vi Semiconductors on Vicinal GaAs Surfaces

Published online by Cambridge University Press:  25 February 2011

G. Feuillet ,
J. Cibert ,
E. Ligeon ,
Y. Gobil ,
K. Saminadayar  and
S. Tatarenko
G. Feuillet
Affiliation:
C.E..A., Centre d'Etudes Nucléaires de Grenoble Département de Recherche Fondamentale, Service de Physique 85 X - 38041 Grenoble Cédex, France
J. Cibert
Affiliation:
Laboratoire de Spectrométrie Physique Université J. Fourier, 38000 Grenoble, France
E. Ligeon
Affiliation:
C.E..A., Centre d'Etudes Nucléaires de Grenoble Département de Recherche Fondamentale, Service de Physique 85 X - 38041 Grenoble Cédex, France
Y. Gobil
Affiliation:
Laboratoire de Spectrométrie Physique Université J. Fourier, 38000 Grenoble, France
K. Saminadayar
Affiliation:
C.E..A., Centre d'Etudes Nucléaires de Grenoble Département de Recherche Fondamentale, Service de Physique 85 X - 38041 Grenoble Cédex, France
S. Tatarenko
Affiliation:
C.E..A., Centre d'Etudes Nucléaires de Grenoble Département de Recherche Fondamentale, Service de Physique 85 X - 38041 Grenoble Cédex, France
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Abstract

We demonstrate that the use of vicinal (001) GaAs surfaces allows twin suppression in M.B.E. grown (111) CdTe. High Resolution Electron Microscopy is used to investigate the atomic structure of and the defects present at the interfaces, as a function of cutting angle and surface preparation. A model is presented that takes into account possible coincidences of facets in CdTe and GaAs in order to explain twin suppression, layer misorientation and the type of interfacial defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 389
Copyright
Copyright © Materials Research Society 1989

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References

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