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Epitaxial Growth and Structure of Thin Single Crystal γ-Al2O3 Films on Si (111) Using e-Beam Evaporation of Sapphire in Ultra-High Vacuum

Published online by Cambridge University Press:  28 July 2011

M. Hong ,
A. R. Kortan ,
J. Kwo ,
J. P. Mannaerts  and
S. Y. Wu
M. Hong
Affiliation:
Industrial Technology Research Institute, Hsin Chu, Taiwan
A. R. Kortan
Affiliation:
Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan
J. Kwo
Affiliation:
Department of Physics, National Tsing Hua University, Hsin Chu, Taiwan Industrial Technology Research Institute, Hsin Chu, Taiwan
J. P. Mannaerts
Affiliation:
Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan
S. Y. Wu
Affiliation:
Dept. Materials Science and Engineering, National Tsing Hua Univ., Hsin Chu, Taiwan
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Abstract

We have characterized the structure of epitaxial Al2O3 films deposited on Si (111) substrate using electron beam evaporation from a high-purity single crystal sapphire source in a molecular beam epitaxy (MBE) approach. The structural studies were carried out mainly by single crystal x-ray diffraction with the initial epitaxial growth observed by in-situ reflection high energy electron diffraction. The Al2O3 films grow in the cubic γ-phase with a very uniform thickness, and a high structural perfection. The <111> axes of the film and the Si substrate are well aligned. A mosaic scan of the Al2O3 (222) peak (with no in-plane component) finds a 0.3 degree (or 18') spread. All three unit cell vectors of the film and the substrate are parallel, but the in-plane cone scans of the {004} and {044} diffraction peaks about the surface normal find a ±3 degree film in-plane rotation with respect to the substrate surface orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D9.5
Copyright
Copyright © Materials Research Society 2004

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References

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