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Enlarged Parameter Space by Use of VHF-GD for Deposition of Thin <p> Type μc-Si:H Films
Published online by Cambridge University Press: 15 February 2011
Abstract
In this paper new results on thin p - type μc-Si:H films deposited at low temperatures of 170 °C by the Very High Frequency - Glow Discharge technique (VHF-GD) are presented. The “tolerated” amount of diborane added in the gas phase ratio as well as the influence of three different plasma excitation frequencies (70, 100 and 130 MHz) in obtaining high electrical conductivity are investigated. The goal is to optimise very thin (< 400 Å) and hence optically transparent films by maintaining high conductivities for the application as window layers of solar cells.
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- Copyright © Materials Research Society 1997
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