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Enhancement of the Electrical Properties of ITO Deposited on Polymeric Substrates by Using a ZnO Buffer Layer

Published online by Cambridge University Press:  17 March 2011

E. Fortunato ,
A. Gonçalves ,
C. Nunes de Carvalho ,
A. Pimentel ,
G. Lavareda ,
A. Marques  and
R. Martins
E. Fortunato
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
A. Gonçalves
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
C. Nunes de Carvalho
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
A. Pimentel
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
G. Lavareda
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
A. Marques
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
R. Martins
Affiliation:
Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon and CEMOP/UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
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Abstract

In this paper we present the effect of the insertion of a non-doped nanocrystalline zinc oxide/buffer layer on the electrical, optical and structural properties of indium tin oxide produced at room temperature by radio frequency plasma enhanced reactive thermal evaporation on polymeric substrates. The electrical resistivity of the ITO films is reduced by more than two orders of magnitude (4.5×10−1 to 2.9×10−3 ωcm). From the Hall effect measurements it is observed that the large decrease associated to the electrical resistivity, is due to the increase associated to the Hall mobility. Concerning the optical properties no effect was observed, being the transmittance in the visible and near the infra red region always higher than 80%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 814: Symposium I – Flexible Electronics 2004-Materials and Device Technology , 2004 , I9.8
Copyright
Copyright © Materials Research Society 2004

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References

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