Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-17T10:00:30.483Z Has data issue: false hasContentIssue false

Enhancement in Efficiency and Stability of Oxide-Free Blue Emission from Porous Silicon by Surface Passivation

Published online by Cambridge University Press:  09 August 2011

H. Mizuno
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
N. Koshida
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
Get access

Abstract

The establishment of tuning techniques of visible emission from porous silicon (PS) is very important from both physical and technological viewpoints. As previously reported that the photoluminescence (PL) spectra of PS can continuously be controlled from red to blue simply by postanodization illumination method without any growth of the surface oxide. Details of this oxide-free blue emission have been studied in terms of the PL decay dynamics and surface chemistry. We report here that post-preparation exposure of PS to hydrogen gas is very useful for improvement in efficiency and stability of blue PL. Based on this technique, it has become possible to get blue electroluminescence even at low bias voltages.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2. Koshida, N. and Koyama, H., Appl. Phys. Lett. 60, 347 (1992).Google Scholar
3. Mizuno, H., Koyama, H., and Koshida, N., Appl. Phys. Lett. 69, 3379 (1996).Google Scholar
4. Mizuno, H., Koyama, H., and Koshida, N., Thin Solid Films 297, 314 (1997).Google Scholar
5. Kuznetsov, V. A., Andrienko, I., and Haneman, D., Appl. Phys. Lett. 72, 3323 (1998).Google Scholar
6. Matsumoto, T., Masumoto, Y., Nakagawa, T., Hashimoto, M., Ueno, K., and Koshida, N., Jpn. J. Appl Phys. 36, 1089 (1997).Google Scholar