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Enhanced response in InAs quantum dots in an InGaAs quantum well solar cells by anti-reflection coatings

Published online by Cambridge University Press:  09 August 2013

Y. F. Makableh
Affiliation:
3217 Bell Engineering Center, University of Arkansas, Fayetteville, AR 72701, USA
R. Vasan
Affiliation:
3217 Bell Engineering Center, University of Arkansas, Fayetteville, AR 72701, USA
J. C. Sarker
Affiliation:
3217 Bell Engineering Center, University of Arkansas, Fayetteville, AR 72701, USA
S. Lee
Affiliation:
3217 Bell Engineering Center, University of Arkansas, Fayetteville, AR 72701, USA
M. A. Khan
Affiliation:
3217 Bell Engineering Center, University of Arkansas, Fayetteville, AR 72701, USA
M. O. Manasreh
Affiliation:
3217 Bell Engineering Center, University of Arkansas, Fayetteville, AR 72701, USA
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Abstract

A study on light absorption enhancement of an InAs quantum dots embedded into InxGa1-xAs quantum well with GaAs as a barrier solar cells was carried out. Solar cell devices were fabricated from different structures, which were grown by using molecular beam epitaxy, with the In mole fraction (x) varied between 0 – 25 %. Poly-L-Lysine ligands and ZnO sol-gel was used to modify the surface of the solar cells and act as anti-reflection coatings. The anti-reflection characteristic of the ligands and the sol-gel were investigated by measuring the solar cell characteristics before and after the solar cells surface modifications. The current-voltage characteristics were measured of the fabricated solar cells before and after Poly-L-Lysine and ZnO coatings. A significant enhancement on the order of 40 % of the solar cells performance was observed. This type of enhancement was observed in the power conversion efficiency, spectral response measurements, and external quantum efficiency.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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References

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