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The Enhanced Outdiffusion and Its Influence on the Impurity Behavior in the Implanted Si at Rapid Electron Beam Annealing

Published online by Cambridge University Press:  25 February 2011

V. A. Kagadey ,
N. I. Lebedeva ,
D. I. Proskurovsky  and
L. V. Yakovleva
V. A. Kagadey
Affiliation:
Institute of High-Current Electronics, Russian Academy of Sciences, 4, Academichesky Av., 634055, Tomsk, Russia.
N. I. Lebedeva
Affiliation:
Institute of High-Current Electronics, Russian Academy of Sciences, 4, Academichesky Av., 634055, Tomsk, Russia.
D. I. Proskurovsky
Affiliation:
Institute of High-Current Electronics, Russian Academy of Sciences, 4, Academichesky Av., 634055, Tomsk, Russia.
L. V. Yakovleva
Affiliation:
Institute of High-Current Electronics, Russian Academy of Sciences, 4, Academichesky Av., 634055, Tomsk, Russia.
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Abstract

The paper presents the results of a comprehensive study of the outdif-fusion of volatile impurities (P, As, Sb) from originally amorphous ion-implanted layers (IILs) of Si at rapid electron-beam heating in vacuum. The phenomenon of enhanced outdiffusion has been discovered and the activation energy of this process has been measured. It has been established that there exists an interconnection between the process of activation, deactivation, diffusion and segregation of the impurity in IIL and its outdiffusion. A qualitative model of the process determining this interconnection has been proposed. The reasons for the lowering of the potential barrier at the IIL-vacuum interface determining the abnormally high rates of vaporization of the impurity have been supposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 219
Copyright
Copyright © Materials Research Society 1993

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